IRFBF30SPBF datasheet

Маркировка

IRFBF30SPBF
Производитель

Vishay Intertechnology
Описание

Vishay Intertechnology IRFBF30SPBF Continuous Drain Current Id: 3.6A Current - Continuous Drain (id) @ 25?° C: 3.6A Drain Source Voltage Vds: 900V Drain To Source Voltage (vdss): 900V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 78nC @ 10V ID_COMPONENTS: 2663309 Input Capacitance (ciss) @ Vds: 1200pF @ 25V Leaded Process Compatible: Yes Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Peak Reflow Compatible (260 C): Yes Power - Max: 125W Rds On (max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V Series: - Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 900 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 3.6 A Resistance Drain-Source RDS (on): 3.7 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Fall Time: 30 ns Minimum Operating Temperature: - 55 C Power Dissipation: 125 W Rise Time: 25 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 90 ns Other Names: *IRFBF30SPBF
Количество страниц

9 шт.
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277,76 KB